Position-Controlled Selective Growth of ZnO Nanorods on Si Substrates Using Facet-Controlled GaN Micropatterns

ZnO nanorod arrays are selectively grown on Si substrates using facet‐controlled GaN micropatterns with highly anisotropic surface energies. Although we used facet‐controlled GaN micropatterns for selective MOPVE growth, other micropatterns can be employed if the difference in surface energies between a top surface and the sidewalls of a micropattern is large enough to affect heteroepitaxial selective growth of the nanorods. This growth may be expanded to create many other position‐controlled semiconductor nanorods.