A non-vacuum method for synthesis of ZnO films by thermal oxidation of ZnS films in air

A non-vacuum method for synthesis of ZnO films by thermal oxidation of ZnS films in air

A non-vacuum method for preparation of ZnO films via thermal oxidation of ZnS films deposited by thin layer thermolysis is described. Transmission electron microscopic studies reveals that the films are polycrystalline with preferentially oriented along (100) direction and grain size of 5–10 nm. The...

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Veröffentlicht in:Materials letters 2007-12, Vol.61 (30), p.5243-5246
Hauptverfasser: Chaudhuri, Tapas K., Pathak, Bhuvan
Format: Artikel
Sprache:eng
Schlagworte:
Non-vacuum method
Semiconductor
Thermal oxidation
Thin film
ZnO
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Zusammenfassung:A non-vacuum method for preparation of ZnO films via thermal oxidation of ZnS films deposited by thin layer thermolysis is described. Transmission electron microscopic studies reveals that the films are polycrystalline with preferentially oriented along (100) direction and grain size of 5–10 nm. The films have about 95% transmission in the visible-near infrared (VIS-NIR) region and an energy band gap of 3.22 eV.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2007.04.039