Interdigitated terahertz emitters

A large aperture terahertz (THz) emitter is presented. The planar photoconducting GaAs device consists of a periodical interdigitated Schottky structure. Additional trenches in the GaAs have double periodicity. They are required for far-field THz emission. Terahertz field strengths of 15V/cm were ac...

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Veröffentlicht in:	Electronics letters 2008-01, Vol.44 (3), p.229-231
Hauptverfasser:	ACUNA, G. P, BUERSGENS, F. F, LANG, C, HANDLOSER, M, GUGGENMOS, A, KERSTING, R
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Radiocommunications Telecommunications Telecommunications and information theory Transmitters. Receivers
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Beschreibung
Zusammenfassung:	A large aperture terahertz (THz) emitter is presented. The planar photoconducting GaAs device consists of a periodical interdigitated Schottky structure. Additional trenches in the GaAs have double periodicity. They are required for far-field THz emission. Terahertz field strengths of 15V/cm were achieved.
ISSN:	0013-5194 1350-911X
DOI:	10.1049/el:20082905