Measurement of electro-optic coefficients of 1.3mum self-assembled InAs/GaAs quantum dots

Measurement of electro-optic coefficients of 1.3mum self-assembled InAs/GaAs quantum dots

The electro-optic properties of 1.3mum self-assembled InAs/GaAs quantum dots grown by metal organic chemical vapour deposition are reported. The linear and quadratic electro-optic coefficients are 2.4X10-11m/V and 3.2X10-18m2/V2, respectively, which are significantly larger than those of GaAs bulk m...

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Veröffentlicht in:Electronics letters 2007-03, Vol.43 (7), p.410-412
Hauptverfasser: Tatebayashi, J, Laghumavarapu, R B, Nuntawong, N, Huffaker, D L
Format: Artikel
Sprache:eng
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Zusammenfassung:The electro-optic properties of 1.3mum self-assembled InAs/GaAs quantum dots grown by metal organic chemical vapour deposition are reported. The linear and quadratic electro-optic coefficients are 2.4X10-11m/V and 3.2X10-18m2/V2, respectively, which are significantly larger than those of GaAs bulk materials. Also, the linear electro-optic coefficient is almost comparable to that of lithium niobate.
ISSN:0013-5194
DOI:10.1049/el:20070245