Multiple-valued decoder using MOS-HBT-NDR circuit

The design of a four-valued decoder based on the negative-differential-resistance (NDR) circuit is demonstrated. The presented NDR circuit is composed of a Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and a SiGe-based heterojunction bipolar transistor (HBT). The fabrication of th...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Electronics letters 2007-09, Vol.43 (20), p.1092-1093
Hauptverfasser:	GAN, K.-J, LIANG, D.-S, TSAI, C.-S, CHEN, Y.-H, WEN, C.-M
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal convertors Transistors
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The design of a four-valued decoder based on the negative-differential-resistance (NDR) circuit is demonstrated. The presented NDR circuit is composed of a Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and a SiGe-based heterojunction bipolar transistor (HBT). The fabrication of the four-valued decoder using this MOS-HBT-NDR circuit is based on the standard 0.35mum SiGe-based BiCMOS process.
ISSN:	0013-5194 1350-911X
DOI:	10.1049/el:20071129