CMOS 2D Hall microsensor with minimal design complexity

CMOS 2D Hall microsensor with minimal design complexity

A new silicon integrated 2D Hall sensor for high-accuracy magnetic-field in-plane vector measurements fabricated through a CMOS technology, has been suggested and tested. Its unique advantage is minimal design complexity: only four external connections, lack of cross-sensitivity between the channels...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Electronics letters 2007-04, Vol.43 (9), p.511-513
Hauptverfasser: ROUMENIN, Ch. S, LOZANOVA, S. V
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A new silicon integrated 2D Hall sensor for high-accuracy magnetic-field in-plane vector measurements fabricated through a CMOS technology, has been suggested and tested. Its unique advantage is minimal design complexity: only four external connections, lack of cross-sensitivity between the channels and very high resolution. In addition, a simple, but highly effective circuitry fully compensates for the offsets and the nonlinear magnetoresistance of the two outputs.
ISSN:0013-5194
1350-911X
DOI:10.1049/el:20070784