Ballistic electron mean free path of titanylphthalocyanine films grown on GaAs

In this article, Au/titanylphthalocyanine/n‐GaAs diodes incorporating ultrathin films of the archetypal organic semiconductor titanylphthalocyanine were investigated by ballistic electron emission microscopy/spectroscopy (BEEM/S). BEEM/S measurements were used to determine the transmission of ballis...

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Veröffentlicht in:	Physica status solidi. C 2008-01, Vol.5 (1), p.386-389
Hauptverfasser:	Özcan, S., Smoliner, J., Andrews, M., Strasser, G., Dienel, T., Fritz, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	73.23.Ad 73.61.Ph
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	In this article, Au/titanylphthalocyanine/n‐GaAs diodes incorporating ultrathin films of the archetypal organic semiconductor titanylphthalocyanine were investigated by ballistic electron emission microscopy/spectroscopy (BEEM/S). BEEM/S measurements were used to determine the transmission of ballistic electrons through titanylphthalocyanine as a function of energy and temperature. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1862-6351 1610-1634 1610-1642
DOI:	10.1002/pssc.200776551