Bulk-drain connected load for subthreshold MOS current-mode logic

Bulk-drain connected PMOS transistors are proposed as loads for subthreshold MOS current-mode logic gates. Such loads exhibit an approximately linear dependence of the subthreshold drain-source current on the drain-source voltage, guaranteeing robust gate operation. The design and performance of an...

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Veröffentlicht in:	Electronics letters 2007-06, Vol.43 (12), p.662-664
Hauptverfasser:	CANNILLO, F, TOUMAZOU, C, LANDE, T. S
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Integrated circuits Oscillators, resonators, synthetizers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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Zusammenfassung:	Bulk-drain connected PMOS transistors are proposed as loads for subthreshold MOS current-mode logic gates. Such loads exhibit an approximately linear dependence of the subthreshold drain-source current on the drain-source voltage, guaranteeing robust gate operation. The design and performance of an inverter gate and ring oscillator in a 0.25mum CMOS technology are presented.
ISSN:	0013-5194 1350-911X
DOI:	10.1049/el:20070370