Direct and Indirect Interfacial Electron Transfer at a Plasmonic p-Cu7S4/CdS Heterojunction
Plasmonic semiconductors exhibit significant potential for harvesting near-IR solar energy, although their mechanisms of plasmon-induced hot electron transfer (HET) are poorly understood. We report a transient absorption study of plasmon-induced HET in p-Cu7S4/CdS type II heterojunctions. Near-IR ex...
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Veröffentlicht in: | ACS nano 2025-01 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Plasmonic semiconductors exhibit significant potential for harvesting near-IR solar energy, although their mechanisms of plasmon-induced hot electron transfer (HET) are poorly understood. We report a transient absorption study of plasmon-induced HET in p-Cu7S4/CdS type II heterojunctions. Near-IR excitation of the p-Cu7S4 plasmon band at ∼1400 nm leads to ultrafast HET into the CdS conduction band with a time constant of |
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ISSN: | 1936-086X 1936-086X |
DOI: | 10.1021/acsnano.4c14556 |