Direct and Indirect Interfacial Electron Transfer at a Plasmonic p-Cu7S4/CdS Heterojunction

Plasmonic semiconductors exhibit significant potential for harvesting near-IR solar energy, although their mechanisms of plasmon-induced hot electron transfer (HET) are poorly understood. We report a transient absorption study of plasmon-induced HET in p-Cu7S4/CdS type II heterojunctions. Near-IR ex...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ACS nano 2025-01
Hauptverfasser: Yang, Zhicheng, Ghorai, Nandan, Wu, Shengxiang, He, Sheng, Lian, Tianquan
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Plasmonic semiconductors exhibit significant potential for harvesting near-IR solar energy, although their mechanisms of plasmon-induced hot electron transfer (HET) are poorly understood. We report a transient absorption study of plasmon-induced HET in p-Cu7S4/CdS type II heterojunctions. Near-IR excitation of the p-Cu7S4 plasmon band at ∼1400 nm leads to ultrafast HET into the CdS conduction band with a time constant of
ISSN:1936-086X
1936-086X
DOI:10.1021/acsnano.4c14556