Influence of boron on the point defect equilibrium in highly n-doped gallium arsenide single crystals

High n-type conductivity of melt-grown gallium arsenide single crystals is usually achieved by doping with tellurium or silicon. The lower carrier concentration and Hall mobility in silicon-doped crystals is attributed to the formation of acceptor defects, in particular Si As - , the isolated galliu...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2007-12, Vol.401, p.246-249
Hauptverfasser: Kretzer, U., Börner, F., Bünger, T., Eichler, S.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:High n-type conductivity of melt-grown gallium arsenide single crystals is usually achieved by doping with tellurium or silicon. The lower carrier concentration and Hall mobility in silicon-doped crystals is attributed to the formation of acceptor defects, in particular Si As - , the isolated gallium vacancy V Ga 3 - and the ( Si Ga – V Ga ) 2 - complex. We show that the contamination of the crystals with boron, which is unavoidable in growing techniques using a boron oxide encapsulant, is decisive for the degree of compensation. In highly n-doped gallium arsenide crystals boron is not only incorporated as the isoelectronic defect B Ga 0 . Additionally, high concentrations of B As 2 - and the negatively charged B As -donor complex are formed. These acceptors can dominate the equilibrium of point defects depending on the concentration ratio of the n-dopant and boron.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2007.08.158