Magnetic Field‐Induced Polar Order in Monolayer Molybdenum Disulfide Transistors

In semiconducting monolayer transition metal dichalcogenides (ML‐TMDs), broken inversion symmetry and strong spin‐orbit coupling result in spin‐valley lock‐in effects so that the valley degeneracy may be lifted by external magnetic fields, potentially leading to real‐space structural transformation....

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Veröffentlicht in:	Advanced materials (Weinheim) 2024-12, Vol.36 (52), p.e2411393-n/a
Hauptverfasser:	Hao, Duxing, Chang, Wen‐Hao, Chang, Yu‐Chen, Liu, Wei‐Tung, Ho, Sheng‐Zhu, Lu, Chen‐Hsuan, Yang, Tilo H., Kawakami, Naoya, Chen, Yi‐Chun, Liu, Ming‐Hao, Lin, Chun‐Liang, Lu, Ting‐Hua, Lan, Yann‐Wen, Yeh, Nai‐Chang
Format:	Artikel
Sprache:	eng
Schlagworte:	Asymmetry Broken symmetry Ferroelectric materials Ferroelectricity Field effect transistors field‐effect transistor Hysteresis Induced polarization lattice expansion Magnetic fields Molybdenum disulfide Monolayers MoS2 polar order Silicon dioxide Silicon substrates Symmetry Transistors Transition metal compounds
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Zusammenfassung:	In semiconducting monolayer transition metal dichalcogenides (ML‐TMDs), broken inversion symmetry and strong spin‐orbit coupling result in spin‐valley lock‐in effects so that the valley degeneracy may be lifted by external magnetic fields, potentially leading to real‐space structural transformation. Here, magnetic field (B)‐induced giant electric hysteretic responses to back‐gate voltages are reported in ML‐MoS2 field‐effect transistors (FETs) on SiO2/Si at temperatures
ISSN:	0935-9648 1521-4095 1521-4095
DOI:	10.1002/adma.202411393