Broadband Light Harvesting from Scalable Two-Dimensional Semiconductor Multi-Heterostructures

Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that maximize absorption using surface plasmons and/or Fabry–Perot ca...

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Veröffentlicht in:Nano letters 2024-11, Vol.24 (44), p.13935-13944
Hauptverfasser: Lin, Da, Lynch, Jason, Wang, Sudong, Hu, Zekun, Rai, Rajeev Kumar, Zhang, Huairuo, Chen, Chen, Kumari, Shalini, Stach, Eric A., Davydov, Albert V., Redwing, Joan M., Jariwala, Deep
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Sprache:eng
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Zusammenfassung:Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that maximize absorption using surface plasmons and/or Fabry–Perot cavities, which limits the weight efficiency of the device. Here, we show the theoretical and experimental realization of an unpatterned/planar semiconductor thin-film absorber based on monolayer transition-metal dichalcogenides. We experimentally demonstrate an average total absorption in the visible range (450–700 nm) of >70% using 300 W g–1 may be achieved in a photovoltaic cell based on this metamaterial absorber.
ISSN:1530-6984
1530-6992
1530-6992
DOI:10.1021/acs.nanolett.4c02963