GISAXS study of the alignment of oriented carbon nanotubes grown on plain SiO2/Si(100) substrates by a catalytically enhanced CVD process

Among the contributions in this issue of pss (a) two articles were selected as Editor's Choice [1, 2]. Rudziński et al. [1] study the influence of substrate orientation on GaN film growth on 4H‐SiC, suggesting a model for the formation of rows of threading edge dislocations and directional crac...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2007-12, Vol.204 (12), p.3903-3903
Hauptverfasser:	Mane Mane, J., Cojocaru, C. S., Barbier, A., Deville, J. P., Thiodjio Sendja, B., Le Normand, F.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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