GISAXS study of the alignment of oriented carbon nanotubes grown on plain SiO2/Si(100) substrates by a catalytically enhanced CVD process

Among the contributions in this issue of pss (a) two articles were selected as Editor's Choice [1, 2]. Rudziński et al. [1] study the influence of substrate orientation on GaN film growth on 4H‐SiC, suggesting a model for the formation of rows of threading edge dislocations and directional cracking in these films. The cover picture is extracted from the article by Mane Mane et al. [2]. The picture illustrates the successful combined use of the GISAXS technique within the Effective Layer Born Approximation (ELBA) and the Distorted Wave Born Approximation (DWBA), in conjunction with the description of diffusing entities as C tubes, Co cylinders and intermixed Co–C clusters, in order to calculate the full experimental GISAXS images of uncorrelated carbon nanotubes grown on cobalt catalyst. The strong contribution of the surface reflectivity to the collected GISAXS signal is emphasized in the paper. Compare the experimental GISAXS pattern of carbon nanotubes in the upper left panel to the ELBA images considering Co cylinders and C tubes with (upper right) and without (lower left) intermixed C–Co tubes. The lower right panel shows the resulting DWBA pattern. The first author, Dr. Jeannot Mane Mane, graduated with a Ph.D. from the University Henri Poincaré in Nancy in 1993. He currently holds a Senior Lecturer position at the University of Yaounde I (Cameroon) as well as a research position at the CNRS Institut de Physique et Chimie des Matériaux de Strasbourg (France). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)