LaAgSiS4: Increasing Optical Birefringence in Rare Earth Chalcogenide by Addition of Planar AgS3 Groups

Optoelectronic materials with excellent birefringent properties are of significant importance in the fields of optical communications and laser technology. Recently, rare earth (RE) chalcogenides with anisotropic [RESn] groups have been proven to be high-performance infrared birefringent materials....

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Veröffentlicht in:Inorganic chemistry 2024-11, Vol.63 (45), p.21590
Hauptverfasser: Dong, Linfeng, Xu, Bohui, Xiao, Deshuai, Liu, Fan, Zhang, Xinyuan, Pan, Xuanlin, Gong, Pifu, Lin, Zheshuai
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Sprache:eng
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Zusammenfassung:Optoelectronic materials with excellent birefringent properties are of significant importance in the fields of optical communications and laser technology. Recently, rare earth (RE) chalcogenides with anisotropic [RESn] groups have been proven to be high-performance infrared birefringent materials. Herein, we demonstrate that the addition of planar groups can further increase the birefringence in RE chalcogenides, as realized by incorporating planar [AgS3] groups into the RE-I-IV-S4 family for the first time. The newly obtained LaAgSiS4 compound shows higher polarity anisotropy than its homologue LaLiSiS4 and LaKSiS4, which resulted in a larger birefringence (0.12@600 nm) at least twice as large as that of the latter two compounds (0.05/0.06@600 nm). The structure-property relationship of LaAgSiS4 was investigated through structural analysis and first-principles calculations. The results indicate that the increased optical birefringence in LaAgSiS4 originates from the synergic effects of the distorted [LaSn] polyhedra and planar [AgS3] triangles. This work provides an effective strategy for enhancing optical birefringence in IR chalcogenides.Optoelectronic materials with excellent birefringent properties are of significant importance in the fields of optical communications and laser technology. Recently, rare earth (RE) chalcogenides with anisotropic [RESn] groups have been proven to be high-performance infrared birefringent materials. Herein, we demonstrate that the addition of planar groups can further increase the birefringence in RE chalcogenides, as realized by incorporating planar [AgS3] groups into the RE-I-IV-S4 family for the first time. The newly obtained LaAgSiS4 compound shows higher polarity anisotropy than its homologue LaLiSiS4 and LaKSiS4, which resulted in a larger birefringence (0.12@600 nm) at least twice as large as that of the latter two compounds (0.05/0.06@600 nm). The structure-property relationship of LaAgSiS4 was investigated through structural analysis and first-principles calculations. The results indicate that the increased optical birefringence in LaAgSiS4 originates from the synergic effects of the distorted [LaSn] polyhedra and planar [AgS3] triangles. This work provides an effective strategy for enhancing optical birefringence in IR chalcogenides.
ISSN:1520-510X
1520-510X
DOI:10.1021/acs.inorgchem.4c03783