n–n type In2O3@-WO3 heterojunction nanowires: enhanced NO2 gas sensing characteristics for environmental monitoring

Solvothermal synthesis of 1D n -In 2 O 3 @ n -WO 3 heterojunction nanowires (HNWs) and their NO 2 gas sensing characteristics are reported. The n -In 2 O 3 @ n -WO 3 HNWs have been well-characterised using XRD, Raman spectroscopy, XPS, SEM and HRTEM analyses. The NO 2 sensing performance of n -In 2...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Mikrochimica acta (1966) 2024-11, Vol.191 (11), p.645, Article 645
Hauptverfasser: Vishnuraj, Ramakrishnan, Unnathpadi, Rajesh, Rangarajan, Murali, Pullithadathil, Biji
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Solvothermal synthesis of 1D n -In 2 O 3 @ n -WO 3 heterojunction nanowires (HNWs) and their NO 2 gas sensing characteristics are reported. The n -In 2 O 3 @ n -WO 3 HNWs have been well-characterised using XRD, Raman spectroscopy, XPS, SEM and HRTEM analyses. The NO 2 sensing performance of n -In 2 O 3 @ n -WO 3 HNWs showed superior performance compared with pristine WO 3 NWs. Due to the distinctive configuration of WO 3 -In 2 O 3 heterojunctions, the n -In 2 O 3 @ n -WO 3 HNWs demonstrated remarkable sensitivity reaching 182% in response towards 500 ppb of NO 2 gas at operating temperature of 200°C which is nearly 3.5 times greater than the response observed with pristine WO 3 (50%). Moreover, the n -In 2 O 3 @ n -WO 3 HNWs also exhibited fast response (8–13 s)/recovery (54–62 s) time characteristics. A plausible sensing mechanism has been discussed. The enhancement in sensor characteristics shows that n -In 2 O 3 @ n -WO 3 HNWs could serve as a promising material for high-performance NO 2 gas sensors for real-time environmental monitoring applications. This work could provide new understandings of the sensing mechanism of n -In 2 O 3 @ n -WO 3 –based heterojunction nanowires, which can be applied to the design of novel n–n type MOS heterojunction materials for the application of low-temperature real-time high-performance NO 2 sensors. Graphical Abstract
ISSN:0026-3672
1436-5073
1436-5073
DOI:10.1007/s00604-024-06693-7