A transparent p-type semiconductor designed via a polarizability-enhanced strongly correlated insulator oxide matrix

Electron-transporting transparent conducting oxides (TCOs) are a commercial reality, however, hole-transporting counterparts are far more challenging because of limited material design. Here, we propose a strategy for enhancing the hole conductivity without deteriorating the band gap ( ) and workfunction ( ) by Cu incorporation in a strongly correlated NiWO insulator. The optimal Cu-doped NiWO (Cu Ni WO ) exhibits a resistivity reduction of ∼10 times NiWO as well as band-like charge transport with the hole mobility approaching 7 cm V s at 200 K, a deep of 5.77 eV, and of 2.8 eV. Experimental and theoretical data reveal that the strength of the electron correlation in NiWO is unaffected by Cu incorporation, while the promoted polarizability weakens electron-phonon coupling, promoting the formation of large polarons. Quantum dot light-emitting and oxide p/n junction devices incorporating Cu Ni WO exhibit remarkable performances, demonstrating that our approach can be deployed to discover new p-type TCOs.