A 0.5-V sigma-delta modulator using analog T-switch scheme for the subthreshold leakage suppression

A 0.5-V sigma-delta modulator implemented in a 0.15-μm FD-SOI process with low VTH of 0.1V using analog T-switch (AT-switch) scheme to suppress subthreshold-leakage problems is presented. The scheme is compared with the conventional circuit, which are also fabricated in the same chip. The measuremen...

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Hauptverfasser: Ishida, Koichi, Tamtrakarn, Atit, Sakurai, Takayasu
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:A 0.5-V sigma-delta modulator implemented in a 0.15-μm FD-SOI process with low VTH of 0.1V using analog T-switch (AT-switch) scheme to suppress subthreshold-leakage problems is presented. The scheme is compared with the conventional circuit, which are also fabricated in the same chip. The measurement result demonstrates that the sigma-delta modulator based on AT-switch realizes 6-bit resolution through reducing non-linear leakage effects while the conventional circuit can achieve 4-bit resolution.
DOI:10.1145/1118299.1118325