Thermally tunable anti-ambipolar heterojunction devices
Two-dimensional materials and their van der Waals heterostructures have emerged as a research focal point for constructing various innovative electronic devices due to their distinct photonic and electronic properties. Among them, anti-ambipolar devices, characterized by their unique nonlinear elect...
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| Veröffentlicht in: | Physical chemistry chemical physics : PCCP 2024-09, Vol.26 (35), p.23438-23446 |
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| container_title | Physical chemistry chemical physics : PCCP |
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| creator | Chen, Shengyao Jin, Jiyou Wang, Wenxiang Wang, Shu Du, Xiaoshan Wang, Feng Ma, Lijun Wang, Junqi Wang, Cong Zhang, Xinzheng Liu, Qian |
| description | Two-dimensional materials and their van der Waals heterostructures have emerged as a research focal point for constructing various innovative electronic devices due to their distinct photonic and electronic properties. Among them, anti-ambipolar devices, characterized by their unique nonlinear electrical behavior, have garnered attention as novel multifunctional components, positioning them as potential contenders for building multi-state logic devices. Utilizing the properties of few-layer As
0.4
P
0.6
and PdSe
2
, we have constructed an anti-ambipolar heterojunction device. At 300 K, the device exhibits a peak voltage (
V
peak
) of −3 V and a peak-to-valley ratio (PVR) close to 8 × 10
3
, and the PVR can be modulated by bias voltage. Furthermore, by characterizing the anti-ambipolar attributes at different temperatures ranging from 80 K to 330 K, we have elucidated the thermally tunable feature of the device. At 330 K, a certain PVR (∼10
3
) and a large
V
peak
(∼−16 V) are obtained, while a PVR exceeding 10
8
has been achieved at 80 K. This temperature-related sensitivity empowers the device with significant potential and thermal tunability in various applications.
High-performance anti-ambipolar 2D van der Waals heterostructure devices with a wide-range of temperature tunability and large peak to valley ratios. |
| doi_str_mv | 10.1039/d4cp02937b |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_rsc_p</sourceid><recordid>TN_cdi_proquest_miscellaneous_3099859449</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3102779928</sourcerecordid><originalsourceid>FETCH-LOGICAL-c226t-7309d2f50789d872f99d7bb561a5ac337da898823c1f685bf1f2d367e56a98bd3</originalsourceid><addsrcrecordid>eNpd0UtLw0AUBeBBFFurG_dKwI0I0XlkMnOXGp9Q0EVdh3mFpuTlTCL03xttreBqLszH4XIuQqcEXxPM4MYmpsMUmNB7aEqSlMWAZbK_m0U6QUchrDDGhBN2iCYMKCVc0CkSi6XztaqqddQPjdKVi1TTl7Gqddm1lfLR0vXOt6uhMX3ZNpF1n6Vx4RgdFKoK7mT7ztD748Mie47nr08v2e08NpSmfSwYBksLjoUEKwUtAKzQmqdEcWUYE1ZJkJIyQ4pUcl2QglqWCsdTBVJbNkOXm9zOtx-DC31el8G4qlKNa4eQj_kgOSQJjPTiH121g2_G7XJGMBUCgMpRXW2U8W0I3hV558ta-XVOcP5dZ36fZG8_dd6N-HwbOeja2R397W8EZxvgg9n9_t2DfQG_m3hX</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3102779928</pqid></control><display><type>article</type><title>Thermally tunable anti-ambipolar heterojunction devices</title><source>Royal Society Of Chemistry Journals 2008-</source><source>Alma/SFX Local Collection</source><creator>Chen, Shengyao ; Jin, Jiyou ; Wang, Wenxiang ; Wang, Shu ; Du, Xiaoshan ; Wang, Feng ; Ma, Lijun ; Wang, Junqi ; Wang, Cong ; Zhang, Xinzheng ; Liu, Qian</creator><creatorcontrib>Chen, Shengyao ; Jin, Jiyou ; Wang, Wenxiang ; Wang, Shu ; Du, Xiaoshan ; Wang, Feng ; Ma, Lijun ; Wang, Junqi ; Wang, Cong ; Zhang, Xinzheng ; Liu, Qian</creatorcontrib><description>Two-dimensional materials and their van der Waals heterostructures have emerged as a research focal point for constructing various innovative electronic devices due to their distinct photonic and electronic properties. Among them, anti-ambipolar devices, characterized by their unique nonlinear electrical behavior, have garnered attention as novel multifunctional components, positioning them as potential contenders for building multi-state logic devices. Utilizing the properties of few-layer As
0.4
P
0.6
and PdSe
2
, we have constructed an anti-ambipolar heterojunction device. At 300 K, the device exhibits a peak voltage (
V
peak
) of −3 V and a peak-to-valley ratio (PVR) close to 8 × 10
3
, and the PVR can be modulated by bias voltage. Furthermore, by characterizing the anti-ambipolar attributes at different temperatures ranging from 80 K to 330 K, we have elucidated the thermally tunable feature of the device. At 330 K, a certain PVR (∼10
3
) and a large
V
peak
(∼−16 V) are obtained, while a PVR exceeding 10
8
has been achieved at 80 K. This temperature-related sensitivity empowers the device with significant potential and thermal tunability in various applications.
High-performance anti-ambipolar 2D van der Waals heterostructure devices with a wide-range of temperature tunability and large peak to valley ratios.</description><identifier>ISSN: 1463-9076</identifier><identifier>ISSN: 1463-9084</identifier><identifier>EISSN: 1463-9084</identifier><identifier>DOI: 10.1039/d4cp02937b</identifier><identifier>PMID: 39221572</identifier><language>eng</language><publisher>England: Royal Society of Chemistry</publisher><subject>Electric potential ; Electronic devices ; Heterojunction devices ; Heterostructures ; Two dimensional materials ; Voltage</subject><ispartof>Physical chemistry chemical physics : PCCP, 2024-09, Vol.26 (35), p.23438-23446</ispartof><rights>Copyright Royal Society of Chemistry 2024</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c226t-7309d2f50789d872f99d7bb561a5ac337da898823c1f685bf1f2d367e56a98bd3</cites><orcidid>0000-0001-5735-246X ; 0000-0002-3073-8853 ; 0000-0002-3854-4447 ; 0000-0001-8128-3273</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/39221572$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Chen, Shengyao</creatorcontrib><creatorcontrib>Jin, Jiyou</creatorcontrib><creatorcontrib>Wang, Wenxiang</creatorcontrib><creatorcontrib>Wang, Shu</creatorcontrib><creatorcontrib>Du, Xiaoshan</creatorcontrib><creatorcontrib>Wang, Feng</creatorcontrib><creatorcontrib>Ma, Lijun</creatorcontrib><creatorcontrib>Wang, Junqi</creatorcontrib><creatorcontrib>Wang, Cong</creatorcontrib><creatorcontrib>Zhang, Xinzheng</creatorcontrib><creatorcontrib>Liu, Qian</creatorcontrib><title>Thermally tunable anti-ambipolar heterojunction devices</title><title>Physical chemistry chemical physics : PCCP</title><addtitle>Phys Chem Chem Phys</addtitle><description>Two-dimensional materials and their van der Waals heterostructures have emerged as a research focal point for constructing various innovative electronic devices due to their distinct photonic and electronic properties. Among them, anti-ambipolar devices, characterized by their unique nonlinear electrical behavior, have garnered attention as novel multifunctional components, positioning them as potential contenders for building multi-state logic devices. Utilizing the properties of few-layer As
0.4
P
0.6
and PdSe
2
, we have constructed an anti-ambipolar heterojunction device. At 300 K, the device exhibits a peak voltage (
V
peak
) of −3 V and a peak-to-valley ratio (PVR) close to 8 × 10
3
, and the PVR can be modulated by bias voltage. Furthermore, by characterizing the anti-ambipolar attributes at different temperatures ranging from 80 K to 330 K, we have elucidated the thermally tunable feature of the device. At 330 K, a certain PVR (∼10
3
) and a large
V
peak
(∼−16 V) are obtained, while a PVR exceeding 10
8
has been achieved at 80 K. This temperature-related sensitivity empowers the device with significant potential and thermal tunability in various applications.
High-performance anti-ambipolar 2D van der Waals heterostructure devices with a wide-range of temperature tunability and large peak to valley ratios.</description><subject>Electric potential</subject><subject>Electronic devices</subject><subject>Heterojunction devices</subject><subject>Heterostructures</subject><subject>Two dimensional materials</subject><subject>Voltage</subject><issn>1463-9076</issn><issn>1463-9084</issn><issn>1463-9084</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNpd0UtLw0AUBeBBFFurG_dKwI0I0XlkMnOXGp9Q0EVdh3mFpuTlTCL03xttreBqLszH4XIuQqcEXxPM4MYmpsMUmNB7aEqSlMWAZbK_m0U6QUchrDDGhBN2iCYMKCVc0CkSi6XztaqqddQPjdKVi1TTl7Gqddm1lfLR0vXOt6uhMX3ZNpF1n6Vx4RgdFKoK7mT7ztD748Mie47nr08v2e08NpSmfSwYBksLjoUEKwUtAKzQmqdEcWUYE1ZJkJIyQ4pUcl2QglqWCsdTBVJbNkOXm9zOtx-DC31el8G4qlKNa4eQj_kgOSQJjPTiH121g2_G7XJGMBUCgMpRXW2U8W0I3hV558ta-XVOcP5dZ36fZG8_dd6N-HwbOeja2R397W8EZxvgg9n9_t2DfQG_m3hX</recordid><startdate>20240911</startdate><enddate>20240911</enddate><creator>Chen, Shengyao</creator><creator>Jin, Jiyou</creator><creator>Wang, Wenxiang</creator><creator>Wang, Shu</creator><creator>Du, Xiaoshan</creator><creator>Wang, Feng</creator><creator>Ma, Lijun</creator><creator>Wang, Junqi</creator><creator>Wang, Cong</creator><creator>Zhang, Xinzheng</creator><creator>Liu, Qian</creator><general>Royal Society of Chemistry</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0001-5735-246X</orcidid><orcidid>https://orcid.org/0000-0002-3073-8853</orcidid><orcidid>https://orcid.org/0000-0002-3854-4447</orcidid><orcidid>https://orcid.org/0000-0001-8128-3273</orcidid></search><sort><creationdate>20240911</creationdate><title>Thermally tunable anti-ambipolar heterojunction devices</title><author>Chen, Shengyao ; Jin, Jiyou ; Wang, Wenxiang ; Wang, Shu ; Du, Xiaoshan ; Wang, Feng ; Ma, Lijun ; Wang, Junqi ; Wang, Cong ; Zhang, Xinzheng ; Liu, Qian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c226t-7309d2f50789d872f99d7bb561a5ac337da898823c1f685bf1f2d367e56a98bd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Electric potential</topic><topic>Electronic devices</topic><topic>Heterojunction devices</topic><topic>Heterostructures</topic><topic>Two dimensional materials</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Shengyao</creatorcontrib><creatorcontrib>Jin, Jiyou</creatorcontrib><creatorcontrib>Wang, Wenxiang</creatorcontrib><creatorcontrib>Wang, Shu</creatorcontrib><creatorcontrib>Du, Xiaoshan</creatorcontrib><creatorcontrib>Wang, Feng</creatorcontrib><creatorcontrib>Ma, Lijun</creatorcontrib><creatorcontrib>Wang, Junqi</creatorcontrib><creatorcontrib>Wang, Cong</creatorcontrib><creatorcontrib>Zhang, Xinzheng</creatorcontrib><creatorcontrib>Liu, Qian</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Physical chemistry chemical physics : PCCP</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Shengyao</au><au>Jin, Jiyou</au><au>Wang, Wenxiang</au><au>Wang, Shu</au><au>Du, Xiaoshan</au><au>Wang, Feng</au><au>Ma, Lijun</au><au>Wang, Junqi</au><au>Wang, Cong</au><au>Zhang, Xinzheng</au><au>Liu, Qian</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermally tunable anti-ambipolar heterojunction devices</atitle><jtitle>Physical chemistry chemical physics : PCCP</jtitle><addtitle>Phys Chem Chem Phys</addtitle><date>2024-09-11</date><risdate>2024</risdate><volume>26</volume><issue>35</issue><spage>23438</spage><epage>23446</epage><pages>23438-23446</pages><issn>1463-9076</issn><issn>1463-9084</issn><eissn>1463-9084</eissn><abstract>Two-dimensional materials and their van der Waals heterostructures have emerged as a research focal point for constructing various innovative electronic devices due to their distinct photonic and electronic properties. Among them, anti-ambipolar devices, characterized by their unique nonlinear electrical behavior, have garnered attention as novel multifunctional components, positioning them as potential contenders for building multi-state logic devices. Utilizing the properties of few-layer As
0.4
P
0.6
and PdSe
2
, we have constructed an anti-ambipolar heterojunction device. At 300 K, the device exhibits a peak voltage (
V
peak
) of −3 V and a peak-to-valley ratio (PVR) close to 8 × 10
3
, and the PVR can be modulated by bias voltage. Furthermore, by characterizing the anti-ambipolar attributes at different temperatures ranging from 80 K to 330 K, we have elucidated the thermally tunable feature of the device. At 330 K, a certain PVR (∼10
3
) and a large
V
peak
(∼−16 V) are obtained, while a PVR exceeding 10
8
has been achieved at 80 K. This temperature-related sensitivity empowers the device with significant potential and thermal tunability in various applications.
High-performance anti-ambipolar 2D van der Waals heterostructure devices with a wide-range of temperature tunability and large peak to valley ratios.</abstract><cop>England</cop><pub>Royal Society of Chemistry</pub><pmid>39221572</pmid><doi>10.1039/d4cp02937b</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0001-5735-246X</orcidid><orcidid>https://orcid.org/0000-0002-3073-8853</orcidid><orcidid>https://orcid.org/0000-0002-3854-4447</orcidid><orcidid>https://orcid.org/0000-0001-8128-3273</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1463-9076 |
| ispartof | Physical chemistry chemical physics : PCCP, 2024-09, Vol.26 (35), p.23438-23446 |
| issn | 1463-9076 1463-9084 1463-9084 |
| language | eng |
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| source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
| subjects | Electric potential Electronic devices Heterojunction devices Heterostructures Two dimensional materials Voltage |
| title | Thermally tunable anti-ambipolar heterojunction devices |
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