Thermally tunable anti-ambipolar heterojunction devices

Two-dimensional materials and their van der Waals heterostructures have emerged as a research focal point for constructing various innovative electronic devices due to their distinct photonic and electronic properties. Among them, anti-ambipolar devices, characterized by their unique nonlinear electrical behavior, have garnered attention as novel multifunctional components, positioning them as potential contenders for building multi-state logic devices. Utilizing the properties of few-layer As 0.4 P 0.6 and PdSe 2 , we have constructed an anti-ambipolar heterojunction device. At 300 K, the device exhibits a peak voltage ( V peak ) of −3 V and a peak-to-valley ratio (PVR) close to 8 × 10 3 , and the PVR can be modulated by bias voltage. Furthermore, by characterizing the anti-ambipolar attributes at different temperatures ranging from 80 K to 330 K, we have elucidated the thermally tunable feature of the device. At 330 K, a certain PVR (∼10 3 ) and a large V peak (∼−16 V) are obtained, while a PVR exceeding 10 8 has been achieved at 80 K. This temperature-related sensitivity empowers the device with significant potential and thermal tunability in various applications. High-performance anti-ambipolar 2D van der Waals heterostructure devices with a wide-range of temperature tunability and large peak to valley ratios.