Sculpting the Electronic Nano-Terrain on a Perovskite Film for Efficient Charge Transport

Nanopatterned halide perovskites have emerged to improve the performance of optoelectronic devices by controlling the crystallographic and optical properties via morphological modification. However, the correlation between the photophysical property and morphology transformation in nanopatterned per...

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Veröffentlicht in:ACS nano 2024-09, Vol.18 (36), p.25337-25348
Hauptverfasser: Kim, Taehee, Chun, Do Hyung, Roe, Dong Gue, Kim, Wook, Lee, Jiyeon, Kim, Jiwon, Choi, Dukhyun, Choi, Dae-Geun, Cho, Jeong Ho, Park, Jong Hyeok, Kim, Dongho
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Sprache:eng
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Zusammenfassung:Nanopatterned halide perovskites have emerged to improve the performance of optoelectronic devices by controlling the crystallographic and optical properties via morphological modification. However, the correlation between the photophysical property and morphology transformation in nanopatterned perovskite films remains elusive, which hinders the rational design of nanopatterned halide perovskites for optoelectronic devices. In this study, we employed nanoimprinting lithography on a perovskite film to exert a precise control over grain growth and manipulate electronic structures at the level of individual grains. Surface-selective fluorescence lifetime imaging microscopy (FLIM) analyzes the spatiotemporally disentangled geometrical variations in carrier recombination rate and band structure modulation according to different pattern morphologies. Consequently, the stereoscopic mechanism of confined grain growth was unveiled, highlighting the quantitative grain size-based parameters that are crucial for nanoscale material engineering. Notably, the pattern-induced reduction of effective charge mass enabled exclusive control over the subdiffusive carrier transport dynamics on perovskite surfaces, ultimately realizing the surface-selective perovskite photodetectors. The implications of this study are expected to provide valuable guidelines, inspiring innovative design protocols for advancing the next-generation optoelectronic technologies.
ISSN:1936-0851
1936-086X
1936-086X
DOI:10.1021/acsnano.4c09605