Thermal stability of NiPt- and Pt-silicide contacts on SiGe source/drain

NiPt (10% Pt) and Pt were investigated as alternatives to Ni for contact formation to SiGe (20%) source/drain. The germanosilicide phase formation and morphology were studied by means of sheet resistance measurements, X-ray diffraction (XRD) analysis and scanning electron microscopy (SEM) inspection...

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Veröffentlicht in:	Microelectronic engineering 2007-11, Vol.84 (11), p.2547-2551
Hauptverfasser:	Demeurisse, C., Verheyen, P., Opsomer, K., Vrancken, C., Absil, P., Lauwers, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Instruments, apparatus, components and techniques common to several branches of physics and astronomy Ni-silicide NiPt-alloy Physics Scanning probe microscopes, components and techniques SiGe Thermal stability
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Beschreibung
Zusammenfassung:	NiPt (10% Pt) and Pt were investigated as alternatives to Ni for contact formation to SiGe (20%) source/drain. The germanosilicide phase formation and morphology were studied by means of sheet resistance measurements, X-ray diffraction (XRD) analysis and scanning electron microscopy (SEM) inspection. From isothermal anneals it is found that NiPt- and Pt-germanosilicide have better thermal stability compared to Ni-germanosilicide. Improved thermal stability is observed for Ni-, NiPt- and Pt-germanosilicide on B doped SiGe as compared to undoped SiGe. The degradation mechanism of NiPt- and Pt-germanosilicide films on SiGe is morphological degradation while the film is still in the mono-(germanosilicide) phase.
ISSN:	0167-9317 1873-5568
DOI:	10.1016/j.mee.2007.05.065