A metastable pentagonal 2D material synthesized by symmetry-driven epitaxy

Most two-dimensional (2D) materials experimentally studied so far have hexagons as their building blocks. Only a few exceptions, such as PdSe 2 , are lower in energy in pentagonal phases and exhibit pentagons as building blocks. Although theory has predicted a large number of pentagonal 2D materials...

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Veröffentlicht in:Nature materials 2024-10, Vol.23 (10), p.1339-1346
Hauptverfasser: Liu, Lina, Ji, Yujin, Bianchi, Marco, Hus, Saban M., Li, Zheshen, Balog, Richard, Miwa, Jill A., Hofmann, Philip, Li, An-Ping, Zemlyanov, Dmitry Y., Li, Youyong, Chen, Yong P.
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Sprache:eng
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Zusammenfassung:Most two-dimensional (2D) materials experimentally studied so far have hexagons as their building blocks. Only a few exceptions, such as PdSe 2 , are lower in energy in pentagonal phases and exhibit pentagons as building blocks. Although theory has predicted a large number of pentagonal 2D materials, many of these are metastable and their experimental realization is difficult. Here we report the successful synthesis of a metastable pentagonal 2D material, monolayer pentagonal PdTe 2 , by symmetry-driven epitaxy. Scanning tunnelling microscopy and complementary spectroscopy measurements are used to characterize this material, which demonstrates well-ordered low-symmetry atomic arrangements and is stabilized by lattice matching with the underlying Pd(100) substrate. Theoretical calculations, along with angle-resolved photoemission spectroscopy, reveal monolayer pentagonal PdTe 2 to be a semiconductor with an indirect bandgap of 1.05 eV. Our work opens an avenue for the synthesis of pentagon-based 2D materials and gives opportunities to explore their applications such as multifunctional nanoelectronics. A metastable pentagonal PdTe 2 monolayer has been synthesized through symmetry-driven epitaxy, utilizing lattice matching with a Pd(100) substrate. The lattices, phonons and electronic structures of this phase have been studied.
ISSN:1476-1122
1476-4660
1476-4660
DOI:10.1038/s41563-024-01987-w