Influence of Growth Temperature and Carrier Flux on the Structure and Transport Properties of Highly Oriented CrO2 on Al2O3 (0001)

In this work we report on the structure and magnetic and electrical transport properties of CrO2 films deposited onto (0001) sapphire by atmospheric pressure (AP)CVD from a CrO3 precursor. Films are grown within a broad range of deposition temperatures, from 320 to 410 °C, and oxygen carrier gas flow rates of 50–500 sccm, showing that it is viable to grow highly oriented a‐axis CrO2 films at temperatures as low as 330 °C i.e., 60–70 °C lower than is reported in published data for the same chemical system. Depending on the experimental conditions, growth kinetic regimes dominated either by surface reaction or by mass‐transport mechanisms are identified. The growth of a Cr2O3 interfacial layer as an intrinsic feature of the deposition process is studied and discussed. Films synthesized at 330 °C keep the same high quality magnetic and transport properties as those deposited at higher temperatures. This work reports on the structure and magnetic and electrical transport properties of CrO2 films deposited onto (0001) sapphire by atmospheric pressure CVD from CrO3 precursor. Films were grown within a broad range of deposition temperatures from 320 to 410 °C, and oxygen carrier gas flow rates of 50–500 sccm. The growth of a Cr2O3 interfacial layer as an intrinsic feature of the deposition process is studied and discussed. Films synthesized at 330 °C retain the high quality magnetic and transport properties of those deposited at higher temperatures.