Morphological and microstructural evolution of phosphorous-rich layer in SnAgCu/Ni-P UBM solder joint
Interfacial morphologies and microstructure of Sn-3Ag-0.5Cu/Ni-P under bump metallization (UBM) with various phosphorous contents were investigated by transmission electron microscope (TEM) and field emission electron probe microanalyzer (FE-EPMA). It was revealed that as the Ni-Sn-P compound was fo...
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Veröffentlicht in: | Journal of electronic materials 2007-11, Vol.36 (11), p.1469-1475 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Interfacial morphologies and microstructure of Sn-3Ag-0.5Cu/Ni-P under bump metallization (UBM) with various phosphorous contents were investigated by transmission electron microscope (TEM) and field emission electron probe microanalyzer (FE-EPMA). It was revealed that as the Ni-Sn-P compound was formed between the solder matrix and Ni-P UBM, the conventionally so-called phosphorous-rich (P-rich) layer was transformed to a series of layer compounds, including Ni^sub 3^P, Ni^sub 12^P^sub 5^ and Ni^sub 2^P. The relationship between Ni-Sn-P formation and evolution of P-rich layers was probed by electron microscopic characterization with the aid of the phase diagram of Ni-P. On the basis of the TEM micrograph, the selected area diffraction (SAD) pattern, and the FE-EPMA results, the detailed phase evolution of P-rich layers in the SnAgCu/Ni-P joint was revealed and proposed. [PUBLICATION ABSTRACT] |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-007-0253-y |