Influence of silver concentration in Agx(Sb0.40S0.60)l00-x thin amorphous films on photoinduced crystallization

Thin amorphous films from ternary system (Ag)-Sb-S were prepared as potential candidates for new phase-change memory films. Amorphous Agx(SID4oS6o)l00_x thin films were deposited by thermal evaporation of Sb33S67 bulk combined with optically induced diffusion and dissolution of Ag. Prepared samples were characterized by electron microprobe (SEM-EDX), UV-Vis-NIR and Raman spectroscopy and by differential scanning calorimetry (DSC). The phase-change recording process in prepared films was tested via photocrystallization experiments done by Ar+ ion laser. Morphology of the laser exposed dots was observed by scanning electron microscopy (SEM) and transmission optical microscopy. Micro X-ray diffraction (mu-XRD) was used for exposed dots crystallinity study. Kinetics of the phase transition was traced by measurement of optical transmission in dependence on laser exposure time (photocrystallization kinetic curve). The aim of this work is to study thermal and optical properties of prepared thin films as well as their crystallization behavior. Obtained results are discussed and confronted with the results found on thin films of the same system with different compositions and/or prepared by different techniques.