Impact of line-edge roughness on resistance and capacitance of scaled interconnects
The impact of line-edge roughness (LER) on resistance R and capacitance C of on-chip interconnects is for the first time evaluated by a simulation methodology based on a realistic modeling of LER. The model can be calibrated with measured LER parameters. A geometrical approximations of LER is genera...
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| Veröffentlicht in: | Microelectronic engineering 2007-11, Vol.84 (11), p.2733-2737 |
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| container_title | Microelectronic engineering |
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| creator | Stucchi, M. Bamal, M. Maex, K. |
| description | The impact of line-edge roughness (LER) on resistance
R and capacitance
C of on-chip interconnects is for the first time evaluated by a simulation methodology based on a realistic modeling of LER. The model can be calibrated with measured LER parameters. A geometrical approximations of LER is generated and superimposed to an interconnect architecture model with no roughness; resistance and capacitance are extracted from the model by a 3D static solver to estimate the impact of LER on them. By applying this methodology to the interconnect scaling scenario of the 2005 ITRS Roadmap, a small but increasing detrimental effect of LER on both
R and
C is predicted. |
| doi_str_mv | 10.1016/j.mee.2007.05.038 |
| format | Article |
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R and capacitance
C of on-chip interconnects is for the first time evaluated by a simulation methodology based on a realistic modeling of LER. The model can be calibrated with measured LER parameters. A geometrical approximations of LER is generated and superimposed to an interconnect architecture model with no roughness; resistance and capacitance are extracted from the model by a 3D static solver to estimate the impact of LER on them. By applying this methodology to the interconnect scaling scenario of the 2005 ITRS Roadmap, a small but increasing detrimental effect of LER on both
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R and capacitance
C of on-chip interconnects is for the first time evaluated by a simulation methodology based on a realistic modeling of LER. The model can be calibrated with measured LER parameters. A geometrical approximations of LER is generated and superimposed to an interconnect architecture model with no roughness; resistance and capacitance are extracted from the model by a 3D static solver to estimate the impact of LER on them. By applying this methodology to the interconnect scaling scenario of the 2005 ITRS Roadmap, a small but increasing detrimental effect of LER on both
R and
C is predicted.</description><subject>Applied sciences</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Interconnect resistance and capacitance</subject><subject>Line edge roughness</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Technology scaling</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxDAQhoMouK7-AG-56K012bRNiidZ_FhY8KCeQzqZrlnadE26gv_eLF3w5mkYeN4Z3oeQa85yznh1t817xHzBmMxZmTOhTsiMKymysqzUKZklRma14PKcXMS4ZWkvmJqRt1W_MzDSoaWd85ih3SANw37z6TFGOngaMLo4Gg9IjbcUTOLdtKdQBNOhpc6PGGDwHmGMl-SsNV3Eq-Ock4-nx_flS7Z-fV4tH9YZiFKNWVsjl8Ck4YUFy5kF1YKom6oxQixEJZSRsBAFB2PKxkLTtrK2XKJCKyrGxZzcTnd3YfjaYxx17yJg1xmPwz5qwepSqrJIIJ9ACEOMAVu9C6434Udzpg_69FYnffqgT7NSJ30pc3M8bg4d25Aau_gXrJPQWtWJu584TE2_HQYdwWGyY11IMrQd3D9ffgFHL4Zl</recordid><startdate>20071101</startdate><enddate>20071101</enddate><creator>Stucchi, M.</creator><creator>Bamal, M.</creator><creator>Maex, K.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20071101</creationdate><title>Impact of line-edge roughness on resistance and capacitance of scaled interconnects</title><author>Stucchi, M. ; Bamal, M. ; Maex, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-f9e17c07a14dcd10dc8fc39b6ba3323638a7c2341caa5bdcbff79d17e8ed36013</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Applied sciences</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Interconnect resistance and capacitance</topic><topic>Line edge roughness</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Technology scaling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Stucchi, M.</creatorcontrib><creatorcontrib>Bamal, M.</creatorcontrib><creatorcontrib>Maex, K.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Stucchi, M.</au><au>Bamal, M.</au><au>Maex, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impact of line-edge roughness on resistance and capacitance of scaled interconnects</atitle><jtitle>Microelectronic engineering</jtitle><date>2007-11-01</date><risdate>2007</risdate><volume>84</volume><issue>11</issue><spage>2733</spage><epage>2737</epage><pages>2733-2737</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>The impact of line-edge roughness (LER) on resistance
R and capacitance
C of on-chip interconnects is for the first time evaluated by a simulation methodology based on a realistic modeling of LER. The model can be calibrated with measured LER parameters. A geometrical approximations of LER is generated and superimposed to an interconnect architecture model with no roughness; resistance and capacitance are extracted from the model by a 3D static solver to estimate the impact of LER on them. By applying this methodology to the interconnect scaling scenario of the 2005 ITRS Roadmap, a small but increasing detrimental effect of LER on both
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| fulltext | fulltext |
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| ispartof | Microelectronic engineering, 2007-11, Vol.84 (11), p.2733-2737 |
| issn | 0167-9317 1873-5568 |
| language | eng |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Interconnect resistance and capacitance Line edge roughness Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Technology scaling |
| title | Impact of line-edge roughness on resistance and capacitance of scaled interconnects |
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