Damage mechanics of electromigration induced failure
Electromigration is a major road block in the pursuit of nanoelectronics and next generation power electronics. The current density in the state-of-the-art microelectronics solder joints is about 10 3 A/cm 2. In the next generation nanoelectronics solder joints this current density is expected to in...
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Veröffentlicht in: | Mechanics of materials 2008, Vol.40 (1), p.66-79 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | Electromigration is a major road block in the pursuit of nanoelectronics and next generation power electronics. The current density in the state-of-the-art microelectronics solder joints is about 10
3
A/cm
2. In the next generation nanoelectronics solder joints this current density is expected to increase by an order of magnitude, at least. In this paper, a new damage mechanics formulation is implemented in a general finite element procedure and used for simulation of solder joints electromigration induced failure. Nonlinear viscoplastic time-dependent nature of the material and current crowding effects are taken into account in the formulation. The model is verified against test data. |
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ISSN: | 0167-6636 1872-7743 |
DOI: | 10.1016/j.mechmat.2007.06.006 |