Damage mechanics of electromigration induced failure

Electromigration is a major road block in the pursuit of nanoelectronics and next generation power electronics. The current density in the state-of-the-art microelectronics solder joints is about 10 3 A/cm 2. In the next generation nanoelectronics solder joints this current density is expected to in...

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Veröffentlicht in:Mechanics of materials 2008, Vol.40 (1), p.66-79
Hauptverfasser: Basaran, Cemal, Lin, Minghui
Format: Artikel
Sprache:eng
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Zusammenfassung:Electromigration is a major road block in the pursuit of nanoelectronics and next generation power electronics. The current density in the state-of-the-art microelectronics solder joints is about 10 3 A/cm 2. In the next generation nanoelectronics solder joints this current density is expected to increase by an order of magnitude, at least. In this paper, a new damage mechanics formulation is implemented in a general finite element procedure and used for simulation of solder joints electromigration induced failure. Nonlinear viscoplastic time-dependent nature of the material and current crowding effects are taken into account in the formulation. The model is verified against test data.
ISSN:0167-6636
1872-7743
DOI:10.1016/j.mechmat.2007.06.006