High-Dimensional Physical Reservoir with Back-End-of-Line-Compatible Tin Monoxide Thin-Film Transistor

This work demonstrates a physical reservoir using a back-end-of-line compatible thin-film transistor (TFT) with tin monoxide (SnO) as the channel material for neuromorphic computing. The electron trapping and time-dependent detrapping at the channel interface induce the SnO·TFT to exhibit fading mem...

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Veröffentlicht in:	ACS applied materials & interfaces 2024-08, Vol.16 (32), p.42884-42893
Hauptverfasser:	Mun, Sahngik A., Jang, Yoon Ho, Han, Janguk, Shim, Sung Keun, Kang, Sukin, Lee, Yonghee, Choi, Jinheon, Cheong, Sunwoo, Lee, Soo Hyung, Ryoo, Seung Kyu, Han, Joon-Kyu, Hwang, Cheol Seong
Format:	Artikel
Sprache:	eng
Schlagworte:	Surfaces, Interfaces, and Applications
Online-Zugang:	Volltext
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