Spatial Control of 2D Nanomaterial Electronic Properties Using Chiral Light Beams

Single-layer two-dimensional (2D) nanomaterials exhibit physical and chemical properties which can be dynamically modulated through out-of-plane deformations. Existing methods rely on intricate micromechanical manipulations (e.g., poking, bending, rumpling), hindering their widespread technological...

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Veröffentlicht in:ACS nano 2024-07, Vol.18 (31), p.20401-20411
Hauptverfasser: Lalaguna, Paula L., Souchu, Paul, Mackinnon, Neel, Crimin, Frances, Kumar, Rahul, Chaubey, Shailendra Kumar, Sarguroh, Asma, McWilliam, Amy, Ganin, Alexey Y., MacLaren, Donald A., Franke-Arnold, Sonja, Götte, Jörg B., Barnett, Stephen M., Gadegaard, Nikolaj, Kadodwala, Malcolm
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Sprache:eng
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Zusammenfassung:Single-layer two-dimensional (2D) nanomaterials exhibit physical and chemical properties which can be dynamically modulated through out-of-plane deformations. Existing methods rely on intricate micromechanical manipulations (e.g., poking, bending, rumpling), hindering their widespread technological implementation. We address this challenge by proposing an all-optical approach that decouples strain engineering from micromechanical complexities. This method leverages the forces generated by chiral light beams carrying orbital angular momentum (OAM). The inherent sense of twist of these beams enables the exertion of controlled torques on 2D monolayer materials, inducing tailored strain. This approach offers a contactless and dynamically tunable alternative to existing methods. As a proof-of-concept, we demonstrate control over the conductivity of graphene transistors using chiral light beams, showcasing the potential of this approach for manipulating properties in future electronic devices. This optical control mechanism holds promise in enabling the reconfiguration of devices through optically patterned strain. It also allows broader utilization of strain engineering in 2D nanomaterials for advanced functionalities in next-generation optoelectronic devices and sensors.
ISSN:1936-0851
1936-086X
1936-086X
DOI:10.1021/acsnano.4c04506