Single atoms and metal nanoclusters anchored to graphene vacancies

Fabricating dispersed single atoms and size-controlled metal nanoclusters remains a difficult challenge due to sintering. Here, we demonstrate that atoms and clusters can be immobilized using atomically clean defect-engineered graphene as the matrix. The graphene is first cleaned of surface contamination with laser heating, after which low-energy Ar irradiation is used to create spatially well-separated vacancies into it. Metal atoms are then evaporated either via thermal or ebeam evaporation onto graphene, where they diffuse until being trapped into a vacancy. The density of embedded structures can be controlled through irradiation dose, and the size of the structures through evaporation time. The resulting structures are confirmed through atomic-resolution scanning transmission electron microscopy and electron energy loss spectroscopy. We demonstrate here incorporation of Al, Ti, Fe, Ag and Au single atoms or nanoclusters, but the method should work equally well for other elements. •Demonstration of a method for controlled inclusion of impurity atoms within the graphene basal plane itself.•Key innovations are the nearly complete removal of surface contamination and the two-step implantation process.•Implantation is confirmed with atomic-resolution scanning transmission electron microscopy and electron energy loss spectroscopy.•The results can easily be extended to other impurities and other 2D materials.