Synthesis of 2D Gallium Sulfide with Ultraviolet Emission by MOCVD

Two‐dimensional (2D) materials exhibit the potential to transform semiconductor technology. Their rich compositional and stacking varieties allow tailoring materials’ properties toward device applications. Monolayer to multilayer gallium sulfide (GaS) with its ultraviolet band gap, which can be tuned by varying the layer number, holds promise for solar‐blind photodiodes and light‐emitting diodes as applications. However, achieving commercial viability requires wafer‐scale integration, contrasting with established, limited methods such as mechanical exfoliation. Here the one‐step synthesis of 2D GaS is introduced via metal–organic chemical vapor deposition on sapphire substrates. The pulsed‐mode deposition of industry‐standard precursors promotes 2D growth by inhibiting the vapor phase and on‐surface pre‐reactions. The interface chemistry with the growth of a Ga adlayer that results in an epitaxial relationship is revealed. Probing structure and composition validate thin‐film quality and 2D nature with the possibility to control the thickness by the number of GaS pulses. The results highlight the adaptability of established growth facilities for producing atomically thin to multilayered 2D semiconductor materials, paving the way for practical applications. Two‐dimensional gallium sulfide (2D GaS) emitting in the ultraviolet to visible spectral range is synthesized via metal–organic chemical vapor deposition. Pulsed deposition of industry‐standard precursors promotes 2D growth. The interface chemistry with the growth of a Ga adlayer as well as strain relation upon the growth of thicker layers resulting in an epitaxial relationship is revealed. Thickness control is enabled by tuning the number of GaS pulses.