Investigation of the Effect of the Passivation on the Charge Transfer from MAPbI3 to Electron Transport Layer Using a Heterodyne Transient Grating Spectroscopic Technique

We fabricated MAPbI3 perovskite thin films with ZnO on a glass substrate, in which a passivation layer (Phenethylammonium iodide (PEAI); p‐methoxyphenethylammonium iodide (CH3O‐PEAI); 2‐methoxyethylammonium iodide (MEAI)) was inserted between two layers. In order to understand the effect of the insertion of each passivation material on the transfer efficiency of the photo‐generated electrons from MAPbI3 to ZnO, we observed the near‐field heterodyne transient grating (NF‐HD‐TG) responses of each film and investigated the component arising from the recombination of the trapped electrons at the ZnO surface. Based on the accelerated recombination between photo‐generated holes remaining in the MAPbI3 layer and surface‐trapped electrons in ZnO and the increase in the number of the trapped electrons in ZnO when either CH3O‐PEAI or PEAI was applied, we successfully revealed that the charge transfer efficiency was enhanced by the insertion of the passivation materials including a benzene ring stabilizing the defect states. Particularly, it was demonstrated that CH3O‐PEAI showed the highest increase in the charge transfer efficiency, which could be attributed to the high electron density in the benzene ring, resulting from the existence of the electron donating group, CH3O, and its role in the effective transition from 3D to 2D perovskite phases. We fabricated MAPbI3 perovskite thin films with ZnO on a glass substrate, in which a passivation layer (PEAI, CH3O‐PEAI, MEAI) was inserted. We revealed the charge transfer efficiency was enhanced by the insertion of the passivation material including a benzene ring stabilizing the defect states and playing a role in the effective transition from 3D to 2D phases.