Polyacrylonitrile as an Efficient Transfer Medium for Wafer‐Scale Transfer of Graphene
The disparity between growth substrates and application‐specific substrates can be mediated by reliable graphene transfer, the lack of which currently strongly hinders the graphene applications. Conventionally, the removal of soft polymers, that support the graphene during the transfer, would contam...
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Veröffentlicht in: | Advanced materials (Weinheim) 2024-07, Vol.36 (29), p.e2402000-n/a |
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Sprache: | eng |
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Zusammenfassung: | The disparity between growth substrates and application‐specific substrates can be mediated by reliable graphene transfer, the lack of which currently strongly hinders the graphene applications. Conventionally, the removal of soft polymers, that support the graphene during the transfer, would contaminate graphene surface, produce cracks, and leave unprotected graphene surface sensitive to airborne contaminations. In this work, it is found that polyacrylonitrile (PAN) can function as polymer medium for transferring wafer‐size graphene, and encapsulating layer to deliver high‐performance graphene devices. Therefore, PAN, that is compatible with device fabrication, does not need to be removed for subsequent applications. The crack‐free transfer of 4 in. graphene onto SiO2/Si wafers, and the wafer‐scale fabrication of graphene‐based field‐effect transistor arrays with no observed clear doping, uniformly high carrier mobility (≈11 000 cm2 V−1 s−1), and long‐term stability at room temperature, are achieved. This work presents new concept for designing the transfer process of 2D materials, in which multifunctional polymer can be retained, and offers a reliable method for fabricating wafer‐scale devices of 2D materials with outstanding performance.
Herein, by using polyacrylonitrile as the transfer medium and encapsulating layer, wafer‐scale graphene transfer, devices fabrication, and efficient encapsulation against the airborne contaminations are successfully achieved, and the transferred graphene delivers improved electronic performances and long‐term stability, offering a reliable method for fabricating wafer‐scale devices of 2D materials with outstanding electronic quality. |
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ISSN: | 0935-9648 1521-4095 1521-4095 |
DOI: | 10.1002/adma.202402000 |