Eight In. Wafer‐Scale Epitaxial Monolayer MoS2
Large‐scale, high‐quality, and uniform monolayer molybdenum disulfide (MoS2) films are crucial for their applications in next‐generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high‐quality MoS2 films and is demonstrated at a wafer scale up to 4‐in. In this s...
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| Veröffentlicht in: | Advanced materials (Weinheim) 2024-07, Vol.36 (30), p.e2402855-n/a |
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| creator | Yu, Hua Huang, Liangfeng Zhou, Lanying Peng, Yalin Li, Xiuzhen Yin, Peng Zhao, Jiaojiao Zhu, Mingtong Wang, Shuopei Liu, Jieying Du, Hongyue Tang, Jian Zhang, Songge Zhou, Yuchao Lu, Nianpeng Liu, Kaihui Li, Na Zhang, Guangyu |
| description | Large‐scale, high‐quality, and uniform monolayer molybdenum disulfide (MoS2) films are crucial for their applications in next‐generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high‐quality MoS2 films and is demonstrated at a wafer scale up to 4‐in. In this study, the epitaxial growth of 8‐in. wafer‐scale highly oriented monolayer MoS2 on sapphire is reported as with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition (VCVD) system. Field effect transistors (FETs) based on the as‐grown 8‐in. wafer‐scale monolayer MoS2 film are fabricated and exhibit high performances, with an average mobility and an on/off ratio of 53.5 cm2 V−1 s−1 and 107, respectively. In addition, batch fabrication of logic devices and 11‐stage ring oscillators are also demonstrated, showcasing excellent electrical functions. This work may pave the way of MoS2 in practical industry‐scale applications.
This paper presents the epitaxial growth of 8‐in. wafer‐scale highly oriented monolayer MoS2 on sapphire with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition system. The as‐grown 8‐in. MoS2 wafers are used for the batch fabrication of large‐scale, high‐performance devices, including field‐effect transistors, logic circuits, and ring oscillators, showcasing the potential for practical industry‐scale applications. |
| doi_str_mv | 10.1002/adma.202402855 |
| format | Article |
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This paper presents the epitaxial growth of 8‐in. wafer‐scale highly oriented monolayer MoS2 on sapphire with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition system. The as‐grown 8‐in. MoS2 wafers are used for the batch fabrication of large‐scale, high‐performance devices, including field‐effect transistors, logic circuits, and ring oscillators, showcasing the potential for practical industry‐scale applications.</description><identifier>ISSN: 0935-9648</identifier><identifier>ISSN: 1521-4095</identifier><identifier>EISSN: 1521-4095</identifier><identifier>DOI: 10.1002/adma.202402855</identifier><language>eng</language><publisher>Weinheim: Wiley Subscription Services, Inc</publisher><subject>2D semiconductor ; Chemical vapor deposition ; Epitaxial growth ; Field effect transistors ; Homogeneity ; Molybdenum disulfide ; monolayer MoS2 ; Monolayers ; Optoelectronics ; Sapphire ; Semiconductor devices ; Vertical orientation ; wafer scale</subject><ispartof>Advanced materials (Weinheim), 2024-07, Vol.36 (30), p.e2402855-n/a</ispartof><rights>2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH</rights><rights>2024. This article is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-1242-4391</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fadma.202402855$$EPDF$$P50$$Gwiley$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fadma.202402855$$EHTML$$P50$$Gwiley$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Yu, Hua</creatorcontrib><creatorcontrib>Huang, Liangfeng</creatorcontrib><creatorcontrib>Zhou, Lanying</creatorcontrib><creatorcontrib>Peng, Yalin</creatorcontrib><creatorcontrib>Li, Xiuzhen</creatorcontrib><creatorcontrib>Yin, Peng</creatorcontrib><creatorcontrib>Zhao, Jiaojiao</creatorcontrib><creatorcontrib>Zhu, Mingtong</creatorcontrib><creatorcontrib>Wang, Shuopei</creatorcontrib><creatorcontrib>Liu, Jieying</creatorcontrib><creatorcontrib>Du, Hongyue</creatorcontrib><creatorcontrib>Tang, Jian</creatorcontrib><creatorcontrib>Zhang, Songge</creatorcontrib><creatorcontrib>Zhou, Yuchao</creatorcontrib><creatorcontrib>Lu, Nianpeng</creatorcontrib><creatorcontrib>Liu, Kaihui</creatorcontrib><creatorcontrib>Li, Na</creatorcontrib><creatorcontrib>Zhang, Guangyu</creatorcontrib><title>Eight In. Wafer‐Scale Epitaxial Monolayer MoS2</title><title>Advanced materials (Weinheim)</title><description>Large‐scale, high‐quality, and uniform monolayer molybdenum disulfide (MoS2) films are crucial for their applications in next‐generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high‐quality MoS2 films and is demonstrated at a wafer scale up to 4‐in. In this study, the epitaxial growth of 8‐in. wafer‐scale highly oriented monolayer MoS2 on sapphire is reported as with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition (VCVD) system. Field effect transistors (FETs) based on the as‐grown 8‐in. wafer‐scale monolayer MoS2 film are fabricated and exhibit high performances, with an average mobility and an on/off ratio of 53.5 cm2 V−1 s−1 and 107, respectively. In addition, batch fabrication of logic devices and 11‐stage ring oscillators are also demonstrated, showcasing excellent electrical functions. This work may pave the way of MoS2 in practical industry‐scale applications.
This paper presents the epitaxial growth of 8‐in. wafer‐scale highly oriented monolayer MoS2 on sapphire with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition system. The as‐grown 8‐in. MoS2 wafers are used for the batch fabrication of large‐scale, high‐performance devices, including field‐effect transistors, logic circuits, and ring oscillators, showcasing the potential for practical industry‐scale applications.</description><subject>2D semiconductor</subject><subject>Chemical vapor deposition</subject><subject>Epitaxial growth</subject><subject>Field effect transistors</subject><subject>Homogeneity</subject><subject>Molybdenum disulfide</subject><subject>monolayer MoS2</subject><subject>Monolayers</subject><subject>Optoelectronics</subject><subject>Sapphire</subject><subject>Semiconductor devices</subject><subject>Vertical orientation</subject><subject>wafer scale</subject><issn>0935-9648</issn><issn>1521-4095</issn><issn>1521-4095</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>24P</sourceid><sourceid>WIN</sourceid><recordid>eNpdkE1Lw0AQQBdRsFavngNevKTOfnb3WGrVQouHKh6XSTLRlG0SkxbtzZ_gb_SXmFLpwdPMwGN4PMYuOQw4gLjBbIUDAUKBsFofsR7XgscKnD5mPXBSx84oe8rO2nYJAM6A6TGYFK9v62haDqIXzKn5-fpepBgomtTFGj8LDNG8KquAW2q6bSHO2UmOoaWLv9lnz3eTp_FDPHu8n45Hs7gWxug448NccKsTl6QmkbkVCQ2l5onjVpC1yDGVGTnliCQnIsROXBrilKsMQfbZ9f5v3VTvG2rXflW0KYWAJVWb1ktQbiikMLZDr_6hy2rTlJ1dR1nVWWi1o9ye-igCbX3dFCtstp6D39Xzu3r-UM-PbuejwyV_AU94ZEA</recordid><startdate>20240701</startdate><enddate>20240701</enddate><creator>Yu, Hua</creator><creator>Huang, Liangfeng</creator><creator>Zhou, Lanying</creator><creator>Peng, Yalin</creator><creator>Li, Xiuzhen</creator><creator>Yin, Peng</creator><creator>Zhao, Jiaojiao</creator><creator>Zhu, Mingtong</creator><creator>Wang, Shuopei</creator><creator>Liu, Jieying</creator><creator>Du, Hongyue</creator><creator>Tang, Jian</creator><creator>Zhang, Songge</creator><creator>Zhou, Yuchao</creator><creator>Lu, Nianpeng</creator><creator>Liu, Kaihui</creator><creator>Li, Na</creator><creator>Zhang, Guangyu</creator><general>Wiley Subscription Services, Inc</general><scope>24P</scope><scope>WIN</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-1242-4391</orcidid></search><sort><creationdate>20240701</creationdate><title>Eight In. Wafer‐Scale Epitaxial Monolayer MoS2</title><author>Yu, Hua ; Huang, Liangfeng ; Zhou, Lanying ; Peng, Yalin ; Li, Xiuzhen ; Yin, Peng ; Zhao, Jiaojiao ; Zhu, Mingtong ; Wang, Shuopei ; Liu, Jieying ; Du, Hongyue ; Tang, Jian ; Zhang, Songge ; Zhou, Yuchao ; Lu, Nianpeng ; Liu, Kaihui ; Li, Na ; Zhang, Guangyu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p2665-d17f2185b9bc6b3f82be7351b9182e88a1ac3de949ee31eeeaa24036e1ef4da03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>2D semiconductor</topic><topic>Chemical vapor deposition</topic><topic>Epitaxial growth</topic><topic>Field effect transistors</topic><topic>Homogeneity</topic><topic>Molybdenum disulfide</topic><topic>monolayer MoS2</topic><topic>Monolayers</topic><topic>Optoelectronics</topic><topic>Sapphire</topic><topic>Semiconductor devices</topic><topic>Vertical orientation</topic><topic>wafer scale</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yu, Hua</creatorcontrib><creatorcontrib>Huang, Liangfeng</creatorcontrib><creatorcontrib>Zhou, Lanying</creatorcontrib><creatorcontrib>Peng, Yalin</creatorcontrib><creatorcontrib>Li, Xiuzhen</creatorcontrib><creatorcontrib>Yin, Peng</creatorcontrib><creatorcontrib>Zhao, Jiaojiao</creatorcontrib><creatorcontrib>Zhu, Mingtong</creatorcontrib><creatorcontrib>Wang, Shuopei</creatorcontrib><creatorcontrib>Liu, Jieying</creatorcontrib><creatorcontrib>Du, Hongyue</creatorcontrib><creatorcontrib>Tang, Jian</creatorcontrib><creatorcontrib>Zhang, Songge</creatorcontrib><creatorcontrib>Zhou, Yuchao</creatorcontrib><creatorcontrib>Lu, Nianpeng</creatorcontrib><creatorcontrib>Liu, Kaihui</creatorcontrib><creatorcontrib>Li, Na</creatorcontrib><creatorcontrib>Zhang, Guangyu</creatorcontrib><collection>Wiley-Blackwell Open Access Collection</collection><collection>Wiley Online Library Free Content</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>MEDLINE - Academic</collection><jtitle>Advanced materials (Weinheim)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yu, Hua</au><au>Huang, Liangfeng</au><au>Zhou, Lanying</au><au>Peng, Yalin</au><au>Li, Xiuzhen</au><au>Yin, Peng</au><au>Zhao, Jiaojiao</au><au>Zhu, Mingtong</au><au>Wang, Shuopei</au><au>Liu, Jieying</au><au>Du, Hongyue</au><au>Tang, Jian</au><au>Zhang, Songge</au><au>Zhou, Yuchao</au><au>Lu, Nianpeng</au><au>Liu, Kaihui</au><au>Li, Na</au><au>Zhang, Guangyu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Eight In. Wafer‐Scale Epitaxial Monolayer MoS2</atitle><jtitle>Advanced materials (Weinheim)</jtitle><date>2024-07-01</date><risdate>2024</risdate><volume>36</volume><issue>30</issue><spage>e2402855</spage><epage>n/a</epage><pages>e2402855-n/a</pages><issn>0935-9648</issn><issn>1521-4095</issn><eissn>1521-4095</eissn><abstract>Large‐scale, high‐quality, and uniform monolayer molybdenum disulfide (MoS2) films are crucial for their applications in next‐generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high‐quality MoS2 films and is demonstrated at a wafer scale up to 4‐in. In this study, the epitaxial growth of 8‐in. wafer‐scale highly oriented monolayer MoS2 on sapphire is reported as with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition (VCVD) system. Field effect transistors (FETs) based on the as‐grown 8‐in. wafer‐scale monolayer MoS2 film are fabricated and exhibit high performances, with an average mobility and an on/off ratio of 53.5 cm2 V−1 s−1 and 107, respectively. In addition, batch fabrication of logic devices and 11‐stage ring oscillators are also demonstrated, showcasing excellent electrical functions. This work may pave the way of MoS2 in practical industry‐scale applications.
This paper presents the epitaxial growth of 8‐in. wafer‐scale highly oriented monolayer MoS2 on sapphire with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition system. The as‐grown 8‐in. MoS2 wafers are used for the batch fabrication of large‐scale, high‐performance devices, including field‐effect transistors, logic circuits, and ring oscillators, showcasing the potential for practical industry‐scale applications.</abstract><cop>Weinheim</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/adma.202402855</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-1242-4391</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | 2D semiconductor Chemical vapor deposition Epitaxial growth Field effect transistors Homogeneity Molybdenum disulfide monolayer MoS2 Monolayers Optoelectronics Sapphire Semiconductor devices Vertical orientation wafer scale |
| title | Eight In. Wafer‐Scale Epitaxial Monolayer MoS2 |
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