Eight In. Wafer‐Scale Epitaxial Monolayer MoS2

Large‐scale, high‐quality, and uniform monolayer molybdenum disulfide (MoS2) films are crucial for their applications in next‐generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high‐quality MoS2 films and is demonstrated at a wafer scale up to 4‐in. In this study, the epitaxial growth of 8‐in. wafer‐scale highly oriented monolayer MoS2 on sapphire is reported as with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition (VCVD) system. Field effect transistors (FETs) based on the as‐grown 8‐in. wafer‐scale monolayer MoS2 film are fabricated and exhibit high performances, with an average mobility and an on/off ratio of 53.5 cm2 V−1 s−1 and 107, respectively. In addition, batch fabrication of logic devices and 11‐stage ring oscillators are also demonstrated, showcasing excellent electrical functions. This work may pave the way of MoS2 in practical industry‐scale applications. This paper presents the epitaxial growth of 8‐in. wafer‐scale highly oriented monolayer MoS2 on sapphire with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition system. The as‐grown 8‐in. MoS2 wafers are used for the batch fabrication of large‐scale, high‐performance devices, including field‐effect transistors, logic circuits, and ring oscillators, showcasing the potential for practical industry‐scale applications.