Polarization Saturation in Multilayered Interfacial Ferroelectrics

Van der Waals polytypes of broken inversion and mirror symmetries have been recently shown to exhibit switchable electric polarization even at the ultimate two‐layer thin limit. Their out‐of‐plane polarization has been found to accumulate in a ladder‐like fashion with each successive layer, offering 2D building blocks for the bottom‐up construction of 3D ferroelectrics. Here, it is demonstrated experimentally that beyond a critical stack thickness, the accumulated polarization in rhombohedral polytypes of molybdenum disulfide saturates. The underlying saturation mechanism, deciphered via density functional theory and self‐consistent Poisson–Schrödinger calculations, point to a purely electronic redistribution involving: 1. Polarization‐induced bandgap closure that allows for cross‐stack charge transfer and the emergence of free surface charge; 2. Reduction of the polarization saturation value, as well as the critical thickness at which it is obtained, by the presence of free carriers. The resilience of polar layered structures to atomic surface reconstruction, which is essentially unavoidable in polar 3D crystals, potentially allows for the design of new devices with mobile surface charges. The findings, which are of general nature, should be accounted for when designing switching and/or conductive devices based on ferroelectric layered materials. This study demonstrates that rhombohedral layers of binary compounds exhibit polarization saturation beyond a critical stack thickness. The underlying saturation mechanism points to a purely electronic redistribution involving bandgap closure that allows for cross‐stack charge transfer and the emergence of free surface charge. The findings, which are of general nature, should be accounted for when designing switching and/or conductive devices based on ferroelectric layered materials.