Robust Tunability and Newly Emerged Q Resonance of Ba0.8Sr0.2TiO3‑Based Microwave Capacitors under Gamma Irradiations

The complex resonance of dielectric quality factor Q, combined with a capacitance tunability n higher than 3:1 without any dispersion, was achieved in the voltage-tunable interdigital capacitors (IDCs) based on epitaxial Ba0.8Sr0.2TiO3 ferroelectric thin films across the microwave L (1–2 GHz), S (2–...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ACS applied materials & interfaces 2024-04, Vol.16 (18), p.23517-23524
Hauptverfasser: Huo, Changhe, Zhang, Xinyuan, Li, Cong, Xu, Hongtao, Yu, Pu, Cheng, Long, Zheng, Changlin, Gu, Zongquan
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The complex resonance of dielectric quality factor Q, combined with a capacitance tunability n higher than 3:1 without any dispersion, was achieved in the voltage-tunable interdigital capacitors (IDCs) based on epitaxial Ba0.8Sr0.2TiO3 ferroelectric thin films across the microwave L (1–2 GHz), S (2–4 GHz), and C (4–8 GHz) bands at room temperature. The resonant Q and n features were driven by the microwave responses of the ferroelectric nanodomains engineered in the films. To promote their application in space radiation environments, the evolutions of Q and n both as functions of frequency f (1–8 GHz) and applied electric field E (0–240 kV/cm) were systematically investigated under a series of gamma-ray irradiations up to 100 kGy. The robust capacitance tunability was accompanied by the emergence of an additional Q resonance at 2.3 GHz in most post-irradiated devices, which is ascribed to extra polar nanoregions of expanded surface lattices associated with oxygen vacancies induced by irradiations.
ISSN:1944-8244
1944-8252
1944-8252
DOI:10.1021/acsami.3c19131