Robust Tunability and Newly Emerged Q Resonance of Ba0.8Sr0.2TiO3‑Based Microwave Capacitors under Gamma Irradiations
The complex resonance of dielectric quality factor Q, combined with a capacitance tunability n higher than 3:1 without any dispersion, was achieved in the voltage-tunable interdigital capacitors (IDCs) based on epitaxial Ba0.8Sr0.2TiO3 ferroelectric thin films across the microwave L (1–2 GHz), S (2–...
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Veröffentlicht in: | ACS applied materials & interfaces 2024-04, Vol.16 (18), p.23517-23524 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The complex resonance of dielectric quality factor Q, combined with a capacitance tunability n higher than 3:1 without any dispersion, was achieved in the voltage-tunable interdigital capacitors (IDCs) based on epitaxial Ba0.8Sr0.2TiO3 ferroelectric thin films across the microwave L (1–2 GHz), S (2–4 GHz), and C (4–8 GHz) bands at room temperature. The resonant Q and n features were driven by the microwave responses of the ferroelectric nanodomains engineered in the films. To promote their application in space radiation environments, the evolutions of Q and n both as functions of frequency f (1–8 GHz) and applied electric field E (0–240 kV/cm) were systematically investigated under a series of gamma-ray irradiations up to 100 kGy. The robust capacitance tunability was accompanied by the emergence of an additional Q resonance at 2.3 GHz in most post-irradiated devices, which is ascribed to extra polar nanoregions of expanded surface lattices associated with oxygen vacancies induced by irradiations. |
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ISSN: | 1944-8244 1944-8252 1944-8252 |
DOI: | 10.1021/acsami.3c19131 |