Anisotropic Te/PdSe2 Van Der Waals Heterojunction for Self‐Powered Broadband and Polarization‐Sensitive Photodetection

Polarization‐sensitive broadband optoelectronic detection is crucial for future sensing, imaging, and communication technologies. Narrow bandgap 2D materials, such as Te and PdSe2, show promise for these applications, yet their polarization performance is limited by inherent structural anisotropies. In this work, a self‐powered, broadband photodetector utilizing a Te/PdSe2 van der Waals (vdWs) heterojunction, with orientations meticulously tailored is introduced through polarized Raman optical spectra and tensor calculations to enhance linear polarization sensitivity. The device exhibits anisotropy ratios of 1.48 at 405 nm, 3.56 at 1550 nm, and 1.62 at 4 µm, surpassing previously‐reported photodetectors based on pristine Te and PdSe2. Additionally, it exhibits high responsivity (617 mA W−1 at 1550 nm), specific detectivity (5.27 × 1010 Jones), fast response (≈4.5 µs), and an extended spectral range beyond 4 µm. The findings highlight the significance of orientation‐engineered heterostructures in enhancing polarization‐sensitive photodetectors and advancing optoelectronic technology. A broad‐band photodetector with polarization sensitivity is successfully demonstrated through an engineered coupling of Te with PdSe2. Specifically, synergistic effects of multiple physical mechanisms are employed to enhance polarization ratio in the near‐infrared (NIR) region.