Surface characterization and microstructure of ITO thin films at different annealing temperatures

In this study, the electron beam evaporation method is used to generate an indium tin oxide (ITO) thin film on a glass substrate at room temperature. The surface characteristics of this ITO thin film are then investigated by means of an AFM (atomic force microscopy) method. The influence of postgrowth thermal annealing on the microstructure and surface morphology of ITO thin films are also examined. The results demonstrate that the film annealed at higher annealing temperature (300 °C) has higher surface roughness, which is due to the aggregation of the native grains into larger clusters upon annealing. The fractal analysis reveals that the value of fractal dimension D f falls within the range 2.16–2.20 depending upon the annealing temperatures and is calculated by the height–height correlation function.