Polydiacetylene-based selective NH3 gas sensor using Sc2O3/GaN structures

PDA(Polydiacetylene)‐supramolecules were successfully immobilized on the surface of Sc2O3/GaN/Sapphire structures for use as selective NH3 gas sensors. The Sc2O3 was epitaxially grown on GaN/Sapphire templates by molecular beam epitaxy (MBE) to replace the non‐uniform native Ga2O3. The GaN‐based PDA...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2007-10, Vol.204 (10), p.3556-3561
Hauptverfasser:	Lee, G. S., Lee, C., Choi, H., Ahn, D. J., Kim, J., Gila, B. P., Abernathy, C. R., Pearton, S. J., Ren, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	07.07.Df 81.05.Hd 81.16.Dn 81.16.Fg Exact sciences and technology General equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Physics Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing
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Beschreibung
Zusammenfassung:	PDA(Polydiacetylene)‐supramolecules were successfully immobilized on the surface of Sc2O3/GaN/Sapphire structures for use as selective NH3 gas sensors. The Sc2O3 was epitaxially grown on GaN/Sapphire templates by molecular beam epitaxy (MBE) to replace the non‐uniform native Ga2O3. The GaN‐based PDA gas sensors showed excellent selectivity for ammonia detection after the end‐functional group was modified to respond to this specific gas species. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1862-6300 0031-8965 1862-6319
DOI:	10.1002/pssa.200723066