The influence of YSZ interlayer on microstructures and dielectric properties of BST thin films prepared by RF magnetron sputtering

(Ba1 − xSrx)TiO3 (BST) thin films were deposited on Pt/Ti/SiO2/Si and YSZ/Pt/Ti/SiO2/Si substrates by radio frequency (RF) magnetron sputtering. The influence of YSZ interlayer on microstructures and dielectric properties of BST thin films were investigated by X-ray diffraction, atomic force microscopy, scanning electron microscopy and dielectric frequency spectra. It was found that the preferred orientation of BST thin films could be tailored by insertion of YSZ interlayer and adjusting the thickness of YSZ interlayer. The BST thin films deposited on YSZ interlayer exhibited a more compact and uniform grain structure than that deposited directly on Pt electrode. Dielectric measurement revealed that the BST thin films deposited on 10 nm YSZ interlayer have the largest dielectric constant and a low dielectric loss tangent. The enhanced dielectric behavior is mainly attributed to the YSZ interlayer which serves as an excellent seeding layer to enhance the crystallization of subsequent BST films layer, and a smaller thermal stress field built up at the interface between YSZ interlayer and BST film layer.