Current mechanism in SbSeI crystals based on phonon-assisted tunnelling emission

Single crystals of SbSeI were grown by the vapour phase technique. Reverse current–voltage (I –V) characteristics of Ag/SbSeI/Ag system have been measured in the temperature range from 273 to 363 K. Analyses of experimental results are explained on the basis of phonon‐assisted electron tunnelling fr...

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Veröffentlicht in:	Physica Status Solidi (b) 2007-09, Vol.244 (9), p.3260-3264
Hauptverfasser:	Audzijonis, A., Sereika, R., Lapeika, V., Žaltauskas, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	71.38.−k 72.80.Jc 81.10.Bk Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electron states Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Physics Polarons and electron-phonon interactions
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Beschreibung
Zusammenfassung:	Single crystals of SbSeI were grown by the vapour phase technique. Reverse current–voltage (I –V) characteristics of Ag/SbSeI/Ag system have been measured in the temperature range from 273 to 363 K. Analyses of experimental results are explained on the basis of phonon‐assisted electron tunnelling from the local levels in the metal–crystal interface to the conduction band. Calculated values: electron–phonon interaction, depth of the trap and effective mass of the polaron enabled us to estimate the electron tunnelling probability. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	0370-1972 1521-3951
DOI:	10.1002/pssb.200642438