Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition
Halide chemical vapor deposition (HCVD) allows for rapid growth while maintaining the purity afforded by a CVD process. While several shallow and deep defect levels have been identified in 6H HCVD substrates using electrical techniques, here we examine several different point defects found in 4H n-t...
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Veröffentlicht in: | Materials science forum 2007-01, Vol.556-557, p.473-476 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Halide chemical vapor deposition (HCVD) allows for rapid growth while maintaining
the purity afforded by a CVD process. While several shallow and deep defect levels have been
identified in 6H HCVD substrates using electrical techniques, here we examine several different
point defects found in 4H n-type HCVD SiC using electron paramagnetic resonance (EPR)
spectroscopy. One spectrum, which exhibits axial symmetry and broadens upon heating, may
represent a collection of shallow defects. The other prominent defect has the g tensor of the
negatively charged carbon vacancy, but additional hyperfine lines suggest a more complex center.
The role of these defects is not yet determined, but we note that the concentrations are similar to
those found for the electrically detected defect levels, making them a reasonable source of
electrically active centers. |
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ISSN: | 0255-5476 1662-9752 1662-9752 |
DOI: | 10.4028/www.scientific.net/MSF.556-557.473 |