Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates
3C-SiC epitaxial layers with a thickness of up to 100 μm and area of ~0.3-0.5 cm2 have been grown by sublimation epitaxy on hexagonal (6H-SiC) substrates at a maximum growth rate of about 200 μm per hour. The epilayers obtained are of n-type (Nd-Na ~ 1017 -1018 cm-3). According to X-ray data, the ep...
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Veröffentlicht in: | Materials science forum 2007-01, Vol.556-557, p.175-178 |
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Sprache: | eng |
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Zusammenfassung: | 3C-SiC epitaxial layers with a thickness of up to 100 μm and area of ~0.3-0.5 cm2 have
been grown by sublimation epitaxy on hexagonal (6H-SiC) substrates at a maximum growth rate of
about 200 μm per hour. The epilayers obtained are of n-type (Nd-Na ~ 1017 -1018 cm-3). According
to X-ray data, the epitaxial layers are composed of the 3C-SiC polytype, without inclusions of other
polytypes. The donor-acceptor (Al-N) recombination band with hνmax ~ 2.12 eV predominates in the
photoluminescence (PL) spectrum. A detailed analysis of a PL spectrum measured at 6 K is
presented. A conclusion is made that the epitaxial layers can be used as substrates for electronic
devices based on 3C-SiC. |
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ISSN: | 0255-5476 1662-9752 1662-9752 |
DOI: | 10.4028/www.scientific.net/MSF.556-557.175 |