Partial Dislocations under Forward Bias in SiC
First-principles calculations are used to investigate the partial dislocations in 4H-SiC. We have shown that the Peierls barriers are strongly dependent on the dislocation core structures. Our results have revealed that the asymmetric reconstruction does not possess midgap states while the symmetric...
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Sprache: | eng |
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Zusammenfassung: | First-principles calculations are used to investigate the partial dislocations in 4H-SiC. We
have shown that the Peierls barriers are strongly dependent on the dislocation core structures. Our
results have revealed that the asymmetric reconstruction does not possess midgap states while the
symmetric reconstructions, characterized by dangling bond on like atoms along the dislocation line,
are always electrically active. We suggested that under forward bias, the free energies of the
symmetric reconstructions are dynamically lowered by continuous electron-hole transitions between
the respective deep levels and valence/conduction bands. |
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ISSN: | 0255-5476 1662-9752 1662-9752 |
DOI: | 10.4028/www.scientific.net/MSF.556-557.279 |