A PHEMT diode single-balanced mixer for K/K-band application

A single‐balanced mixer for operation in the microwave‐ and millimeter‐wave bands is presented. This monolithic microwave‐integrated circuit was implemented on AlGaAs/InGaAs/GaAs pseudomorphic high‐electron‐mobility transistor process with a chip size of 2.11 × 1.54 mm2. This mixer employs a planar...

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Veröffentlicht in:	Microwave and optical technology letters 2007-11, Vol.49 (11), p.2692-2694
Hauptverfasser:	Lin, Che-Hung, Liu, Hong-Zhi, Chu, Chen-Kuo, Huang, Hou-Kuei, Liu, Chi-Chuan, Chang, Ching-Hsueh, Wu, Chang-Luen, Chang, Chian-Sern, Wang, Yeong-Her
Format:	Artikel
Sprache:	eng
Schlagworte:	Ku/K-band Marchand balun microwave monolithic integrated circuit (MMIC) pseudomorphic high electron mobility transistor (PHEMT)
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Beschreibung
Zusammenfassung:	A single‐balanced mixer for operation in the microwave‐ and millimeter‐wave bands is presented. This monolithic microwave‐integrated circuit was implemented on AlGaAs/InGaAs/GaAs pseudomorphic high‐electron‐mobility transistor process with a chip size of 2.11 × 1.54 mm2. This mixer employs a planar Marchand balun and a low‐pass filter for isolating three ports corresponding to RF, LO, and IF ports. The best upconversion loss is 8 dB with an LO‐to‐RF isolation better than 30 dB. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2692–2694, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22884
ISSN:	0895-2477 1098-2760
DOI:	10.1002/mop.22884