Antimonide Type-II “W” Photodiodes with Long-Wave Infrared R 0 A Comparable to HgCdTe

Antimonide Type-II “W” Photodiodes with Long-Wave Infrared R 0 A Comparable to HgCdTe

The recent development of graded-gap W-structured superlattices (GG-Ws) has led to a substantial improvement in the dark current performance of infrared photodiodes implemented with type-II superlattices (T2SLs). A study of ten GG-W photodiode wafers with 50% power responsivity cutoffs from 9 mum to...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of electronic materials 2007-08, Vol.36 (8), p.852-856
Hauptverfasser: Canedy, C L, Aifer, E H, Vurgaftman, I, Tischler, J G, Meyer, J R, Warner, J H, Jackson, E M
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The recent development of graded-gap W-structured superlattices (GG-Ws) has led to a substantial improvement in the dark current performance of infrared photodiodes implemented with type-II superlattices (T2SLs). A study of ten GG-W photodiode wafers with 50% power responsivity cutoffs from 9 mum to 13.4 mum is presented. Dark current performance has increased by a factor of 10 over that of previous type-II structures, without degrading quantum efficiency. In relation to HgCdTe (MCT) based photodiodes, several samples in the study show effective dynamic-resistance-area products close to the MCT trend line for diffusion-limited R 0 A.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-007-0109-5