Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC

Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC

Aluminum ions (Al+) were implanted at room temperature or at 500°C into n-type 4HSiC. The implantation damage (displaced Si atoms) and the electrical activation of Al+ ions (concentration of Al acceptors) were determined by Rutherford backscattering in channeling mode and Hall effect, respectively,...

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Veröffentlicht in:Materials science forum 2007-01, Vol.556-557, p.343-346
Hauptverfasser: Krieger, M., Schöner, Adolf, Weber, Heiko B., Schmid, Frank, Obernhofer, M., Pensl, Gerhard
Format: Artikel
Sprache:eng
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Zusammenfassung:Aluminum ions (Al+) were implanted at room temperature or at 500°C into n-type 4HSiC. The implantation damage (displaced Si atoms) and the electrical activation of Al+ ions (concentration of Al acceptors) were determined by Rutherford backscattering in channeling mode and Hall effect, respectively, as a function of the annealing temperature.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.556-557.343