6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction

6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction

A structural characterisation by high energy x-ray diffraction of [015] and [001] grown 6H-SiC crystals is presented. The [015]-grown crystal shows an improved crystal quality, concerning the curvature of lattice planes and the micro domain structure. We relate this to the lowered level of rotationa...

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Veröffentlicht in:Materials science forum 2007-01, Vol.556-557, p.219-222
Hauptverfasser: Magerl, Andreas, Winnacker, Albrecht, Epelbaum, Boris M., Hock, Rainer, Stockmeier, Matthias, Filip, Octavian
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container_title Materials science forum
container_volume 556-557
creator Magerl, Andreas
Winnacker, Albrecht
Epelbaum, Boris M.
Hock, Rainer
Stockmeier, Matthias
Filip, Octavian
description A structural characterisation by high energy x-ray diffraction of [015] and [001] grown 6H-SiC crystals is presented. The [015]-grown crystal shows an improved crystal quality, concerning the curvature of lattice planes and the micro domain structure. We relate this to the lowered level of rotational symmetry for the [015]-growth which reduces the number of active slip systems during the growth process.
doi_str_mv 10.4028/www.scientific.net/MSF.556-557.219
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